RecruitingNot ApplicableNCT07546292

Enhancing Letter-Speech Sound Learning and Reading Network Activation With Transcranial Electrical Stimulation

Transcranial Electrical Stimulation and the Reading Brain: Toward Novel Interventions for Reading Impairments


Sponsor

Silvia Brem

Enrollment

60 participants

Start Date

Apr 23, 2026

Study Type

INTERVENTIONAL

Conditions

Summary

This study investigates the effects of transcranial electrical stimulation (tES) on the brain and its potential to enhance reading-related learning. Adult participants with a range of reading abilities will receive transcranial random noise stimulation (tRNS) while they perform an artificial orthography learning task. This task simulates letter-speech sound learning, an important first step during reading acquisition known to be impaired in individuals with developmental dyslexia. The effects of the intervention will be assessed using both behavioral measures and functional magnetic resonance imaging (fMRI).


Eligibility

Min Age: 18 YearsMax Age: 35 Years

Plain Language Summary

Simplified for easier understanding

This clinical trial is studying Sham Stimulation and Transcranial random noise stimulation for people with dyslexia, dyslexia, developmental, and other related conditions. The study is currently recruiting participants at 1 location. People eligible for this study include aged 18 Years to 35 Years.

This summary was AI-generated to explain the trial in plain language. It is not medical advice. Always discuss eligibility with your doctor before enrolling in a clinical trial.

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Interventions

OTHERTranscranial random noise stimulation

Participants will receive high-frequency tRNS (max. 1.5 mA) applied to the left superior temporal gyrus. A high-definition setup (3x1 electrodes) will be used to achieve more focal stimulation. Stimulation will be applied during an artificial orthography learning task with simultaneous fMRI acquisition.

OTHERSham Stimulation

Participants will also have electrodes placed on their scalp. The setup is programmed to induce a short ramp-up of the chosen electrical current followed by a ramp-down at the beginning and at the end of the stimulation. In between, no current will be applied. Sham stimulation will be applied during an artificial orthography learning task with simultaneous fMRI acquisition.


Locations(1)

University Hospital of Psychiatry

Zurich, Switzerland

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NCT07546292


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